View IRHNA7160_295773.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 91396C
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA7160 100K Rads (Si) IRHNA3160 300K Rads (Si) IRHNA4160 600K Rads (Si) IRHNA8160 1000K Rads (Si) RDS(on) 0.04 0.04 0.04 0.04 ID 51A 51A 51A 51A
IRHNA7160 100V, N-CHANNEL
REF: MIL-PRF-19500/664 (R) TM RAD-Hard HEXFET MOSFET TECHNOLOGY
QPL Part Number JANSR2N7432U JANSF2N7432U JANSG2N7432U JANSH2N7432U
SMD - 2
International Rectifier's RADHard HEXFET(R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 51 32.5 204 300 2.4 20 500 51 30 7.3 -55 to 150 300 ( for 5s) 3.3 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
5/4/2000
IRHNA7160
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- -- 2.0 16 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.11 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- V V/C
Test Conditions
VGS =0 V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 32.5A VGS = 12V, ID = 51A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 32.5A VDS= 80V,VGS=0V VDS = 80V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 51A VDS = 50V VDD = 50V, ID = 51A, RG = 2.35
0.040 0.045 4.0 V -- S( ) 25 A 250 100 -100 310 53 110 35 150 150 200 --
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
5300 1600 350
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 51 204 1.8 520 6.5
Test Conditions
A
V nS C Tj = 25C, IS = 51A, VGS = 0V Tj = 25C, IF = 51A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJPCB Junction-to-Case Junction-to-PC Board
Min Typ Max Units
-- -- -- 1.6 0.42 --
C/W
Test Conditions
Solder to a 1" sq. copper clad PC Board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics Pre-Irradiation
IRHNA7160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage
100K Rads(Si)1
600 to 1000K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =32.5A VGS = 12V, ID =32.5A VGS = 0V, IS = 51A
Min 100 2.0 -- -- -- -- -- --
Max -- 4.0 100 -100 25 0.045 0.04 1.8
Min 100 1.25 -- -- -- -- -- --
Max -- 4.5 100 -100 50 0.062 0.057 1.8
1. Part number IRHNA7160 (JANSR2N7432U) 2. Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) and IRHNA8160 (JANSH2N7432U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Ion Cu Br LET MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305
VDS(V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43 100 100 100 80 60 39 100 90 70 50 --
120 100 80 VDS 60 40 20 0 0 -5 -10 VGS -15 -20 -25 Cu Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNA7160
Pre-Irradiation
1000
1000
100
10
5.0V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
5.0V
10 1 10
20s PULSE WIDTH TJ = 150 C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 51A
I D , Drain-to-Source Current (A)
2.5
TJ = 25 C TJ = 150 C
100
2.0
1.5
10
1.0
0.5
1 5 6 7 8
V DS = 50V 20s PULSE WIDTH 9 10 11 12
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHNA7160
10000
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 51A VDS = 80V VDS = 50V VDS = 20V
16
C, Capacitance (pF)
6000
Ciss
12
4000
8
Coss
2000
4
Crss
0 1 10 100 0 0 40 80 120
FOR TEST CIRCUIT SEE FIGURE 13
160 200 240 280
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
I D , Drain Current (A)
100 100us
TJ = 150 C
10
1ms 10 10ms
TJ = 25 C V GS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
1 0.0
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
www.irf.com
5
IRHNA7160
Pre-Irradiation
60
VDS
50
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
40
-VDD
12V
30
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS 90%
10
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHNA7160
1200
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
1 5V
1000
ID 23A 32A 51A
800
VD S
L
D R IV E R
600
RG
D .U .T
IA S
+ - VD D
A
12V 20V
tp
400
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
200
0 25 50 75 100 125 150
V (B R )D S S tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
www.irf.com
7
IRHNA7160
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L= 0.38mH Peak IL = 51A, VGS = 12V ISD 51A, di/dt 410A/s, VDD 100V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 5/00
8
www.irf.com

▲Up To Search▲

Price & Availability of IRHNA7160

	To Download IRHNA7160 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .